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| STV9379F VERTICAL DEFLECTION BOOSTER . . . . . . POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V (on Pin 5) SUITABLE FOR DC COUPLING APPLICATION EXTERNAL FLYBACK SUPPLY DESCRIPTION Designed for monitors and high performance TVs, the STV9379F vertical deflection booster can handle flyback voltage up to 90V. Further to this, it is possible to have a flyback voltage which is more than the double of the supply (Pin 2). This allows to decrease the power consumption, or to decrease the flyback time for a given supply voltage. The STV9379F operates with supplies up to 42V and provides up to 2.0APP output current to drive the yoke. The STV9379F is offered in HEPTAWATT package. PIN CONNECTIONS HEPTAWATT (Plastic Package) ORDER CODE : STV9379F 7 6 5 4 3 2 1 Non-inverting Input Output Stage Supply Output GND or Negative Supply Flyback Supply Supply Voltage Inverting Input Tab connected to pin 4 9379F-01.EPS August 1998 1/5 STV9379F BLOCK DIAGRAM OUTPUT SUPPLY STAGE VOLTAGE SUPPLY 2 6 FLYBACK SUPPLY 3 INVERTING INPUT NON-INVERTING INPUT 1 7 POWER AMPLIFIER THERMAL PROTECTION 4 5 OUTPUT GROUND or NEGATIVE SUPPLY ABSOLUTE MAXIMUM RATINGS Symbol VS V6 V1 , V7 IO I3 I3 VESD V3 - V2 Toper Tstg Tj Notes : 1. 2. 3. Parameter Supply Voltage (Pin 2) (see note 1) Flyback Peak Voltage (Pin 6) (see note 1) Amplifier Input Voltage (Pins 1-7) (see note 1) Maximum Output Peak Current (see notes 2 and 3) Maximum Sink Current (t < 1ms) Maximum Source Current (t < 1ms) (in the diode, see Block Diagram) (see note 2) ESD susceptibility : EIAJ Norm (200pF discharged through 0) Voltage Difference between Flyback Supply and Supply Voltage Operating Ambient Temperature Storage Temperature Junction Temperature Versus Pin 4. The output current can reach 4A peak for t 10s (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). Value 50 100 - 0.3, + VS 1.5 1.5 1.5 300 50 - 20, + 75 - 40, + 150 +150 Unit V V V A A A V V o o o C C THERMAL DATA Symbol Rth (j-c) Tt Tt Tjr Parameter Junction-case Thermal Resistance Temperature for Thermal Shutdown Hysteresis on Tt Recommended Max. Junction Temperature Max. Value 3 150 10 120 Unit o C/W o o o C C 2/5 9379F-02.TBL C 9379F-01.TBL C 9379F-02.EPS STV9379F STV9379F ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) Symbol VS V3M I2 I6 IO I1 I7 VIO VIO/dt GV V5L V5H VD5 - 6 VD3 - 6 V3-6 Parameter Operating Supply Voltage Range Pin 2 Quiescent Current Pin 6 Quiescent Current Max. Operating Peak Output Current Amplifier Bias Current Amplifier Bias Current Offset Voltage Offset Drift versus Temperature Voltage Gain Output Saturation Voltage to GND (Pin 4) Output Saturation Voltage to Supply (Pin 6) Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-6 I5 = 1.0A I5 = - 1.0A I5 = 1.0A I3 = 1.0A 80 1 1.6 1.5 1.6 2.6 1.5 2.1 2.0 2.0 3.0 - 10 V1 = 22V, V7 = 23V V1 = 23V, V7 = 22V - 0.15 - 0.15 Test Conditions Versus Pin 4 I3 = 0, I5 = 0 I3 = 0, I5 = 0 5 Min. 10 VS 13 10 Typ. Max. 42 90 20 30 1.0 -1 -1 7 Unit V V mA mA A A A mV V/oC dB V V V V 9379F-03.TBL Operating Flyback Supply Voltage (V3M VS + 50V) Versus Pin 4 V Voltage Drop between Pins 3-6 (2nd part of flyback) I3 = - 1.0A APPLICATION CIRCUITS AC COUPLING +VS Flyback Supply 2 6 3 R5 1 POWER AMPLIFIER THERMAL PROTECTION 5 0.22m F 1.5W Rd (*) Ly Yoke 7 VREF STV9379F 4 R3 R4 CL R2 R1 Ly Ly < Rd < (*) 50m s 20m s 9379F-03.EPS 3/5 STV9379F APPLICATION CIRCUITS (continued) DC COUPLING +VS Flyback Supply 2 6 3 R5 1 VREF+ Vertical Position Adjustment POWER AMPLIFIER THERMAL PROTECTION 5 0.22m F 1.5W Rd (*) Ly Yoke 7 STV9379F 4 -VEE R2 R1 Ly Ly < Rd < (*) 50m s 20m s 9379F-04.EPS Figure 1 : Output Transistors SOA (for secondary breakdown) I C (A) @ T case = 25C Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current) ISB (%) 100 90 10 1 80 10 -1 t = 1ms t = 10ms t = 100ms 1 10 70 9379F-05.EPS 10 -2 10 2 60 25 50 75 100 125 4/5 9379F-06.EPS V CE (V) T case (C) STV9379F PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT Dimensions Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. Inches Typ. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 3 15.8 6.6 0.102 0.594 0.236 0.110 0.200 0.118 0.622 0.260 HEPTV.TBL 3.85 0.144 0.152 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - All Rights Reserved Purchase of I C Components of STMicroelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 2 5/5 PM-HEPTV.EPS |
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